Date on Master's Thesis/Doctoral Dissertation


Document Type

Master's Thesis

Degree Name


Department (Legacy)

Department of Physics

Committee Chair

Sumanasekera, Gamini U.




Crystalline beta-Ga2O3 nanowires with two distinct morphologies have been synthesized through simple physical evaporation of Te doped GaAs powder in argon atmosphere. The structure of the nanowires was characterized by SEM, TEM, XRD, EDX, and raman spectroscopy. Nanowires as long as hundreds of micrometers with diameters in the range of 20-200 nm have been produced with a high yield. Absence of Tellurium in the nanowires indicates that the growth mechanism is not VLS based. The role of Tellurium in the growth process is not clear. Substitution of sulfur in place of tellurium resulted in similar nanostructures. One of the morphologies of the nanowires exhibits herringbone structure and the TEM images show hexagonal crystallites ordered in regular spacing along the nanowire axis. The crystal plane of the nanowire is parallel to one of the facets of the crystallite. The other morphology is essentially platelets and free of hexagonal crystallites. Laser assisted catalyst growth process has been employed to synthesize various semiconducting nanowires, heterostructural nanowires and single walled carbon nanotubes. Structural characterization and physical properties of individual nanostructures have been explored.